ferroelectric effect
英
美
铁电效应
双语例句
- Study on Characteristics of Ferroelectric Field Effect Transistor with Pt/ PZT/ Pt Structure
Pt/PZT/Pt结构铁电场效应晶体管性能研究 - Transparent ferroelectric ceramics possess very high electro-optic effect and fast electro-optic response, however there exist hysteresis and quite large temperature dependence. Therefore the stability is very critical.
透明铁电陶瓷具有很高的电光效应和快速的响应时间，但其存在回滞效应且受温度影响大，存在稳定性问题。 - The ferroelectric field effect transistor Ferroelectric Liquid Crystal Displays
铁电场效应晶体管铁电液晶显示器述评 - Ferroelectric Aging and History Memory Effect in TGS
TGS的铁电老化和历史记忆效应 - Ferroelectric Resonance and Nonlinear Effect
铁电共振和非线性效应 - Its magnetoelectric conversion factor ( dE/ dH) comes from the product effect of ferroelectric phase and ferromagnetic phase, and the product effect is called magnetoelectric effect.
铁电&铁磁复合材料的磁电转换功能是通过铁电相与铁磁相的乘积效应来实现的，这种乘积效应即磁电效应（MagnetoelectricEffect）。 - Ferroelectric/ Ferromagnetic composite is a novel functional material, which possesses not only ferroelectric and ferromagnetic properties but also magnetoelectric coupling effect ( ME) so that it has very broad range potential applications.
铁电/铁磁复合材料是一种新型的功能材料，不仅集合了铁电性和铁磁性的优点，而且具有磁电耦合效应，因此具有十分广泛的应用前景。 - The ferroelectric field effect transistor FRAM Technique
铁电场效应晶体管铁电存储器技术 - The interface layer between the ferroelectric thin film and the bottom electrode is formed by high-temperature interdiffusion, and it is observed that the interface layer affects the electrical properties of ferroelectric thin film analogous to the heterojunction effect of ferroelectric thin film on silicon substrate.
铁电薄膜与底电极之间由于高温扩散而形成了界面层，且观察到其对薄膜电性能的影响类似于硅衬底上铁电薄膜的异质结效应。 - It is probably due to the high diffusion of the ferroelectric phase transitions, the approximate independence of the mm2-3m transition temperature on the Sr2+ substitution and the appearence of PTCR effect in the 4mm phase.
这可能是由于其铁电相变高度弥散、mm2&3m铁电相变温度与Sr~（2-）的取代量基本无关以及4mm相出现PTCR效应的结果。 - On one hand, a high coercive field is disadvantageous to the sufficient reorientation of ferroelectric domains during electrical poling, generating a negative effect on piezoelectric properties.
一方面，高的矫顽场Ec使材料在极化过程中铁电畴无法充分转向，不利于提高压电性能； - Studies on Characteristics of Ferroelectric Field Effect Transistor with Bi_4Ti_3O_ ( 12) Gate on Si Substrates
Bi4Ti3O（12）栅Si基铁电场效应晶体管特性研究 - The displacement mechanisms of electrostrictive effect, inverse piezoelectric effect and ferroelectric effect are systematically analysed in a microcosmic way, and the results of analyses indicate that the displacement mechanisms of these three effects are totally different;
从微观上系统分析了电致伸缩效应、逆压电效应和铁电效应的位移机理，表明：三种效应的位移机理是根本不同的； - The displacement of piezoelectric ceramic actuators is mainly due to inverse piezoelectric effect and ferroelectric effect; the contribution of electrostrictive effect to the displacement is so little that it can be neglected;
压电陶瓷执行器的位移主要是由逆压电效应、铁电效应所引起的，电致伸缩效应对位移的贡献极其微弱，可以忽略不计； - Research on the Ferroelectric Films and Ferroelectric Field Effect Memory
铁电薄膜和铁电场效应存储器研究 - Review on Structure and Properties of Ferroelectric Liquid Crystals:(ⅰ) Effect of Molecular Core on the Properties of Ferroelectric Liquid Crystals
铁电液晶的分子结构与性能评述：（Ⅰ）分子核对铁电液晶性能的影响 - Ferroelectric Field Effect Devices and Their Applications
铁电场效应器件及其应用 - Lead zirconate titanate ( PZT) ferroelectric film was prepared by RF-magnetron sputtering route. The phase composition and the effect of sputtering parameter on the texture of the films were analyzed by X-ray diffraction ( XRD) technique.
利用RF磁控溅射法制备了Pb（Zr，Ti）O3（PZT）铁电薄膜，利用X射线衍射（XRD）法研究了薄膜的相组成及溅射工艺参数对薄膜织构的影响。 - We not only consider the relaxation for the dielectric and conductivity of the ferroelectric material but also take account of the action of the "time-order" effect of the shock front traveling in the specimen.
我们不仅考虑铁电介质的电介弛豫和电导率弛豫，而且还计及冲击波阵面在样品中传播的时序效应的影响。 - Simulation of Physical Mechanism for I-V Characteristics of Ferroelectric Nonvolatile Memory Field Effect Transistor
铁电存储场效应晶体管I-V特性的物理机制模拟 - The switching criterion which considers the interaction among the ferroelectric inclusions and the effect of material properties of constitutive phases is established.
建立了考虑铁电夹杂之间相互作用以及组分材料性能影响的畴变准则。 - The ferroelectric field effect transistor ( FeFET) with metal-ferroelectric-insulator-semiconductor ( MFIS) structure has drawn much attention because of its advantage such as nondestructive readout and high storage density.
由具有金属-铁电-绝缘层-半导体（MFIS）结构的铁电场效应晶体管（FeFET）组成的铁电存储器以其非破坏性读出、存储密度高等优点引起国内外研究者的关注。 - P ( VDF-TrFE) has been already used in a broad range of technological applications ( sensors, organic non-volatile storage, ferroelectric field effect transistor et al) asfunctional material because it exhibits excellent ferroelectric properties.
偏氟乙烯与三氟乙烯共聚物P（VDF-TrFE）是具有优异铁电特性的功能材料，已被广泛应用于传感器、有机非挥发性存储、铁电场效应晶体管等器件中。 - The output and transfer characteristics of the ferroelectric field effect transistor ( FeFET) were studied.
研究并比较了铁电场效应晶体管（FeFET）结构的输出特性和转移特性。 - Moreover, interaction between the ferroelectric and ferromagnetic orders will lead to the effect of magnetoelectric ( ME) coupling.
此外，BFO中的铁电序和铁磁序的相互作用将产生磁电耦合效应。 - Different external conditions as well as the formation and distribution of the defects will impact the capability of switching of the ferroelectric polarization, and the domain switching effect will affect the ferroelectric failure of the integrated system structure and devices.
不同的外加条件以及缺陷的产生和重新分布等影响了铁电极化反转能力，畴变效应将会导致集成系统结构和器件的失效。 - From symmetry consideration, the interface between ferroelectric and ferromagnetic is time-reversal symmetry broken and space-reversal symmetry broken simultaneously, which is the prerequisite of magnetoelectric effect.
从对称性考虑，铁电／铁磁界面既是时间反演对称性破缺，也是空间反演对称性破缺的，而这正是磁电耦合存在的先决条件。 - Ferroelectric thin films have various unique characteristics, such as piezoelectricity, pyroelectricity, electro-optic, acousto-optic, photorefractive effect, non-linear optics effect and high dielectric constant and so on, compared to the bulk materials.
铁电薄膜与体材料相比可以具有良好的压电、热释电、电光、声光、光折变效应、非线性光学效应和高介电系数等优良特性[10]。 - As one of the most promising ferroelectric materials, PLZT has important applications on varieties of fields including semiconductor industry, micro-memory, pyroelectric infrared detector, ferroelectric field effect transistor, micro-mechanical and etc. Ferroelectric property of PLZT is sensitive to the concentration of La.
PLZT作为最具发展前景的铁电材料之一，在半导体工业、微存储器、热释电红外探测器、铁电场效应管、微机械等方面都有着重要的应用。 - The research results show that strain states of vertical epitaxial ferroelectric thin films will result in the phase transition in the films, then have an effect on the ferroelectric properties and piezoelectric properties.
研究结果表明垂直外延铁电薄膜上的应变会导致薄膜发生铁电相变，进而对不同相的铁电性能和压电性能产生影响。